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| 2010-10-04 | RFMD expands foundry services to include GaAs tech RF Micro Devices Inc. has added Gallium Arsenide technology to its foundry services portfolio, and will start offering a full suite of GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) technologies to customers. |
| 2009-06-23 | Amplifiers tailored for high-frequency apps RF Micro Devices, Inc. has introduced five new distributed amplifiers for broadband, high-frequency applications. |
| 2005-03-22 | PA + driver amp deliver 1W Mimix Broadband introduced a GaAs MMIC three-stage balanced PA and complementary three-stage driver amplifier that both use 0.15µm gate length GaAs pHEMT device model technology. |
| 2003-06-11 | Mitsubishi develops 76GHz MMICs for automobile radars Mitsubishi Electric Corp. has developed eight high performance MMIC chipset solution models by electronic beam scanning for 76GHz mm-wave radars. |
| 2003-05-29 | IceFyre amps adopt TriQuint GaAs pHEMT process IceFyre amps adopt TriQuint GaAs pHEMT process |
| 2002-06-20 | Mass production technology of large size III-V compound semiconductor expitaxial wafers for microwave devices by MOVPE Mass production technology of large size III-V compound semiconductor expitaxial wafers for microwave devices by MOVPE |
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