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| 2010-03-11 | Buzz: Samsung to go gate-last for 22nm South Korea's Samsung Electronics Co. Ltd is reportedly looking at gate-last technology as an alternative in high-k dielectrics, according to sources. |
| 2009-07-03 | Antenna touts higher efficiency in small form Yageo Corp. has announced the 1044 SMD LP patch antenna that is half the size of traditional chip computers, yet achieves 80 percent better efficiency for GPS applications in personal navigation devices, smart phones and notebooks. |
| 2008-01-25 | 45nm: What Intel didn't tell you Some high points of Intel's 45nm HKMG technology are: high-k first, metal-gate-last integration; hafnium oxide (HfO2) gate dielectric (1nm EOT); and dual band-edge work function metal gates (TiN for PMOS; TiAlN for NMOS). The gate-last integration is one point that needs a bit of clarification in the Intel process flow. |
| 2007-12-12 | TSMC develops 32nm process sans high-k TSMC develops 32nm process sans high-k |
| 2007-12-06 | High-k process for CMOS cancels gate leakage High-k process for CMOS cancels gate leakage |
| 2007-11-22 | NEC jumpstarts 40nm process, eDRAM tech NEC Electronics has unveiled a 40nm logic process that makes use of a one-two punch: hafnium-based high-k dielectric materials and nickel-silicide gate electrodes. |
| 2007-05-02 | High-k dielectrics to benefit from composite nanomaterials, says researchers High-k dielectrics to benefit from composite nanomaterials, says researchers |
| 2007-01-29 | Intel carries out Moore's 'commandment' Intel announced that it will use a new material with a property called high-k, for the transistor gate dielectric, and a new combination of metal materials for the transistor gate electrode. |
| 2006-06-02 | Symposium to mull 45nm challenges Technologists attending the 2006 Symposium on VLSI Technology in mid-June will hear about multiple facets of 45nm processes |
| 2006-01-01 | Taiwan's ITRI innovates in emerging memory research As process technologies move into deep-submicron arena, Taiwan makers realize that they have to develop their proprietary technologies in a bid to keep competitiveness. |
| 2005-12-07 | NEC says 55nm process cuts power consumption NEC Electronics announced that it has developed a 55nm node process named UX7LS that will employ emersion lithography and higher dielectric constant (high-k) material. |
| 2005-08-01 | Little time, big decisions for 45nm node Technologists face some tough decisions as they ponder which knobs to turn for the 45nm node. |
| 2005-07-06 | Transistor's gate stack structure uses Hf-based, high-k dielectric Transistor's gate stack structure uses Hf-based, high-k dielectric |
| 2005-04-19 | Intel may drop high-k gate dielectric, despite work on next version Intel may drop high-k gate dielectric, despite work on next version |
| 2005-01-20 | Transistor's gate stack structure uses Hf-based high-k dielectric Transistor's gate stack structure uses Hf-based high-k dielectric |
| 2004-12-22 | NEC transistor with improved operation speed NEC and NEC Electronics announced the development of its new transistor that features a new gate stack structure using an Hf-based high-k dielectric and a metal gate electrode. |
| 2004-11-01 | NEC claims breakthrough in high-k dielectrics NEC claims breakthrough in high-k dielectrics |
| 2004-09-22 | NEC develops high-K gate dielectric film transistor NEC develops high-K gate dielectric film transistor |
| 2003-04-03 | High-k insulators pose instability challenges High-k insulators pose instability challenges |
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