What is NAND flash?
| Flash memory chips are constructed of either NOR or NAND gates. Developed by Toshiba, NAND flash works like a disk rather than memory. It has faster erase and write times, higher density, and lower cost per bit than NOR flash, and ten times the endurance. However, its I/O interface allows only sequential access to data, which makes it suitable for mass-storage devices and somewhat less useful for computer memory. |
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| 2008-06-23 | Will Seagate buy Intel's stake in IM Flash Seagate Technology could be a potential buyer of Intel Corp.'s stake in IM Flash Technologies LLC, the chip giant's joint NAND flash-memory venture with Micron Technology Inc., according to an analyst. |
| 2012-09-21 | Why GigaDevice gambles on NOR flash memory China fabless firm GigaDevice is staying put in the NOR flash market even if the industry proves challenging for sales growth and expansion |
| 2013-04-30 | Why flash storage is important to MEMS Solid state drives operate at higher temperatures, and MEMS devices can withstand that environment because they regulate themselves. |
| 2008-06-30 | What types of ECC should be used on flash memory NOR flash normally does not need error-correcting code (ECC). On the other hand, NAND requires ECC to ensure data integrity. NAND flash includes extra storage on each page to store ECC code as well as other information for wear leveling, logical to physical block mapping, and other software overhead functions. |
| 2002-08-14 | WEDC ships Flash disk modules in SO-DIMM packages The WED7GxxxATA33 DimmDrive single-chip Flash disk module has densities ranging from 16MB to 768MB in 144-pin SO-DIMM packages |
| 2009-06-09 | Wear-leveling techniques in NAND flash devices Wear leveling is a process that helps reduce premature wear in NAND flash devices. This application note highlights the importance of wear leveling, explains two primary wear-leveling techniques—static and dynamic—and calls attention to other considerations involved in implementing wear leveling. |
| 2004-11-29 | Wear leveling in single level cell NAND flash memories This app note describes the wear leveling algorithm that STMicro recommends to implement in the flash translation layer (FTL) software for NAND flash memories. |
| 2012-04-24 | Weak demand pulls NAND flash contract price Demand momentum for the memory device was weak since the start of the slow season, with contact price falling by 4-8 percent, noted DRAMeXchange. |
| 2006-09-18 | Vendors push for flash, HDD coexistence HDD and NAND flash vendors have agreed on a peaceful coexistence, claiming that the two technologies are complementary and emphasizing the need to select the one most appropriate for a particular application. |
| 2005-07-01 | Using multilevel cell NAND flash technology in consumer applications Multilevel cell NAND flash memories surpass data-storage performance requirements in today's digital consumer applications |
| 2008-05-07 | Using Micron MT29F2G08AACWP NAND flash memory in Toshiba TC58NVG1S3BTG00 apps This technical note compares the third-generation 2Gbit Micron NAND flash device with 2Gbit Toshiba device TC58NVG1S3BTG00. |
| 2009-03-02 | Using Copyback operations to maintain data integrity in NAND flash devices Copyback operations, which are sometimes referred to as Internal Data Move operations, play a key role in maintaining data integrity in the NAND flash device. |
| 2007-05-09 | UMC gears up for CPUs, NAND flash memory United Microelectronics Corp. said it is in talks on a CPU production deal, but it is being circumspect on how it will attack the high-volume flash memory market |
| 2012-04-24 | Ultrabooks to benefit global NAND flash market According to IHS, NAND flash memory market is expected to achieve eight percent growth this year because of major sales drivers such as solid-state-drive equipped ultrabooks. |
| 2007-06-04 | Triumvirate heralds use of flash in PCs, works on standard The use of flash in notebooks and desktops has received a boost with Dell, Intel and Microsoft collaborating on a standard for NAND flash module controllers. |
| 2011-04-26 | Toshiba-SanDisk overtake Intel-Micron in NAND process race Outpacing the Intel-Micron duo, Toshiba and SanDisk have fabricated 2bit-per-cell, 64Gb NAND flash memory chips with 19nm process technology, thus enabling 8GB on a single chip. |
| 2003-12-05 | Toshiba, SanDisk to expand NAND flash memory production Toshiba Corp. and SanDisk Corp. have agreed to cooperate in the construction of a new 300mm wafer fab facility at Toshiba's Yokkaichi operations. |
| 2006-02-13 | Toshiba, SanDisk to boost spending on flash fab In an effort to keep up with huge demand for its NAND flash-memory devices, SanDisk and Toshiba said that they plan to boost the investment and production levels of its 300mm fab venture in Japan. |
| 2007-03-01 | Toshiba, SanDisk ship 'highest-density' NAND Toshiba co-developed with SanDisk a 16Gbit NAND flash memory fabricated in 56nm process technology, said to be the highest-density single-chip NAND flash memory yet achieved. |
| 2006-07-14 | Toshiba, SanDisk name flash-memory JV Moving to expand its ties, Toshiba and SanDisk blessed and gave a new name its previously-announced NAND flash-memory fab venture. |
| 2003-06-13 | Toshiba, SanDisk co-develop NAND cell architecture Toshiba and SanDisk have announced the development of a high density NAND flash memory cell structure that allows fabrication of 4Gb NAND flash devices. |
| 2002-02-07 | Toshiba, Samsung show 1Gb Flash designs Serial Flash reached the gigabit density at the International Solid-State Circuits Conference, where Toshiba Corp. and Samsung Electronics Co. Ltd each described 1Gb NAND Flash designs on Monday (Feb. 4). |
| 2012-07-26 | Toshiba's NAND flash cuts increases market morale Toshiba's temporary capacity reduction will benefit the oversupply situation in the third quarter as well as rally NAND flash industry confidence needed to help stabilize market price. |
| 2006-03-28 | Toshiba wins NAND suit versus Hynix, says report Hynix Semiconductor was ordered by a Japanese court on March 24 to stop selling NAND flash memory components in Japan in relation to a lawsuit brought by Toshiba. |
| 2008-02-21 | Toshiba ups fab capacity, inks NAND deal with SanDisk Targeting to boost its fab capacity, Toshiba is constructing additional plants in Yokkaichi, Mie Prefecture, and in Kitakami, Iwate Prefecture, Japan. The company likewise signed a NAND deal with SanDisk |
| 2013-05-22 | Toshiba to produce next-gen NAND flash tech The company developed a second generation 19nm process technology that it will apply to mass production of 2bit/cell 64Gb NAND memory chips later this month |
| 2008-12-18 | Toshiba to cut NAND production by 30 Toshiba Corp. will cut its NAND flash memory production at its Yokkaichi Operations plant in Mie Prefecture, Japan by approximately 30 percent, effective January 2009. |
| 2005-08-02 | Toshiba to boost NAND production Anticipating soaring demand for NAND flash memory, Toshiba Corp. will boost investment in its memory fab in Yokkaichi, increasing capacity to 30,000 300mm wafers a month, or 40 percent more than previously planned. |
| 2011-04-11 | Toshiba takes 24nm route for NAND flash SmartNAND integrates NAND flash memory with a control IC that can perform error checking and correction, thereby removing the burden of ECC from the host processor and enhancing speed performance. |
| 2008-06-18 | Toshiba shuts down 200mm NAND JV Toshiba is slightly scaling back on its 200mm NAND flash-memory production amid a downturn in the arena. It will mainly focus on its 300mm fabs to meet improved production efficiency for the company's overall semiconductor business. |
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