EMI/EMC Design: [EMI/EMC Design/Application Notes][Page 4] News, Tech Articles, App Notes

Market Watch

Infineon, India team report ESD advance
The joint research initiative of Infineon Technologies and the Indian Institute of Technology, Bombay, is claiming an advance in the integration of high-voltage functionality for advanced CMOS technologies.

Application Notes (Sorted By Date)

Selection of SCRs for parallel operation (2001-08-21)
AC2001—77GHz Gunn oscillator module (2001-08-21)
Turn-on performance of thyristors in parallel (2001-08-21)
Gate-drive considerations for IGBT efficiency (2001-08-20)
Calculation of junction temperature (2001-08-20)

IGBT ratings and characteristics (2001-08-20)
An introduction to IGBTs (2001-08-20)
SAW bandpass filter for DECT (2001-08-20)
Gate triggering and gate characteristics (2001-08-20)
Clamping of power semiconductors (2001-08-20)

Inductance analysis of chip scale packages (2001-06-19)
What really is inductance? (2001-06-19)
Performing computation functions with signal conditioners (2001-06-18)
Electromagnetic delay lines (2001-06-15)
Pulse transformers (2001-06-15)

SUPERECTIFIER design brings new level of reliability to surface mount components (2001-06-14)
Failure modes and fusing of TVS devices (2001-06-14)
GS rectifiers in SMPS using the Topswitch integrated circuit (2001-06-14)
Using rectifiers in voltage multiplier circuits (2001-06-14)
Surface mount low capacitance TVS: The discrete solution (2001-06-14)

Selecting the optimum transient voltage suppressor (2001-06-14)
TVS placement the critical path to the leading edge (2001-06-13)
Protecting for repetitive transient voltages (2001-06-13)
What is a silicon transient voltage suppressor? And how does it work? (2001-06-13)
Using the power versus time curve (2001-06-13)

Determining clamping voltage levels for a broad range of pulse currents (2001-06-13)
Protecting low current loads in harsh electrical environments (2001-06-13)
Paralleling transient voltage suppressors for higher power capability (2001-06-13)
Series stacking of TVS for higher voltages and power (2001-06-13)
Effect of lead wire lengths on protector clamping voltages (2001-06-13)

Design guidelines for Schottky rectifiers (2001-06-13)
Hardening power supplies to line voltage transients (2001-06-13)
Automotive transient voltage suppressor (2001-06-13)
Transient suppressors, a competitive look (2001-06-13)
Floating ground SPNT MMIC switch driver techniques (2001-06-06)

Handling guidelines for ESD protection of GaAs MMICs (2001-06-06)
Reflow soldering conditions for VCO and synthesizer products (2001-06-04)
Using MMICAD to compute Cj(0) (2001-05-31)
Using PARAMETER SWEEP to design a new class of varactor diode (2001-05-31)
Implementation of Echo control for ITU G.165/DECT on TMS320C62xx processors (2001-05-17)

Reduced electromagnetic interference (EMI) with the TMS320C24x DSP (2001-05-14)
Developing a low bit rate speech coder based on the half-rate GSM standard with the TMS320C30 DSP (2001-05-08)
Determining CPU and memory requirements for real-time speech recognition systems using the TMS320C3x/C4x (2001-05-08)
Configuring PWM outputs of TMS320F240 with dead band for different power devices (2001-05-07)
Guidelines for using decoupling capacitors on DSP designs (2001-05-03)

TPS3801/09—Smallest SVS for monitoring DSPs and processors (2001-05-01)
Acoustic-echo cancellation software for hands-free wireless systems (2001-05-01)
Table look-up and interpolation on the TMS320C2xx (2001-04-27)
Cutting-edge mount down methods boost power semiconductor performance and cut system costs (2001-04-20)
Understanding the differences between standard MOSFETs and avalanche energy rated MOSFETs (2001-04-20)

259 Records, Total 6 Page, The 4 Page

Article review

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