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Converters get boost from power transistors

Posted: 10 Jul 2014  Print Version  Bookmark and Share

Keywords:eGaN  FET  development board  DC/DC converter 

Efficient Power Conversion Corporation (EPC) delivered six new-generation power transistor products and corresponding development boards ranging from 30V to 200V. These products offer significant reduction in RDS(on), which increases output current capability in applications such as DC/DC converters, point-of-load (POL) converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, LED lighting, and industrial automation.

To demonstrate the improved performance of these eGaN FETs, two buck converters were built. The EPC9018 combines the 30V EPC2023 FET as the synchronous rectifier with the 40V EPC2015 as the control switch of a 12V to 1.2V DC/DC POL converter.

The 12V to 1.2V, 40A POL converter operating at switching frequency of 1MHz achieved efficiencies above 91.5 per cent and demonstrated the superior in-circuit performance of the latest generation of eGaN power devices compared to the state-of-the-art Si MOSFET modules.

eGaN FET

The EPC9019, a 48V to 12V converter, uses the 80V EPC2021 as the synchronous rectifier switch with the 100V EPC2001 as the control switch. The results of this 48V to 12V, 30A non-isolated DC/DC intermediate bus converter operating at a switching frequency of 300kHz achieved efficiencies above 98 per cent, again significantly outperforming a comparable converter using state-of-the-art silicon power MOSFETs.


Development boards

To simplify the evaluation process of the latest high performance eGaN FETs, development boards are available to support easy "in circuit" performance evaluation of each new product being introduced (reference table given above). These boards include all the critical components on a single board that can be easily connected into any existing converter.

The EPC9014 and EPC9031 through EPC9034 development boards are half-bridge configurations with onboard gate drives, featuring various eGaN power transistors. All boards are 2in x 1.5in and contain two eGaN FETs using the Texas Instruments LM5113 gate driver, supply, and bypass capacitors. Each board contains all critical components and layout for optimal switching performance.

The EPC9018 and EPC9019 development boards mentioned above are also available for easy "in circuit" performance evaluation.





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