X-REL augments high-temperature MOSFET transistors line
X-REL Semiconductor has broadened its XTR2N family of high-temperature MOSFET transistors by introducing two new mid-power P-channel and two small-signal P- and N-channel transistors intended for high-reliability, extreme temperature and extended lifetime applications.
The mid-power P-channel transistors introduced are divided into two families depending upon the maximum operating voltage. Devices XTR2N0325 and XTR2N0350 are intended for a maximum operation drain-source voltage of -30V, whereas XTR2N0525 and XTR2N0550 can sustain drain-source voltages of up to -50V. In each sub-family, two different transistor sizes, "25" and "50", are available providing two possible maximum drain currents.
The small signal transistors released are the XTR2N0307 30V P-channel MOSFET, and the XTR2N0807 80V N-channel MOSFET. The XTR2N0307 small signal 30V P-channel has an on-state resistance at 230℃ of 7Ω, whereas that of the XTR2N0807 small signal 80V N-channel is 9.1Ω, with respective continuous drain currents of 350mA (900mA peak) and 200mA (450mA peak).
The devices are able to reliably operate well below and above the -60℃ to 230℃ (5 years at 230℃) temperature range. The expected lifetime of X-REL Semiconductor parts in a driver application operating at Tj=150℃ is over 35 years.
- Julien Happich
EE Times Europe
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