III-V MOSFETs rival Si-based transistors
University of California at Santa Barbara (UCSB) researchers presented at the 2014 VLSI Symposium that their metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated with III-V materials compare to, or even exceed the performance of silicon-based devices.
In a demonstration supported by the Semiconductor Research Corporation, the researchers showcased what they called the world's highest-performance MOSFET formed from indium-gallium-arsenide (InGaAs) atop indium-phosphide (InP), which can be grown on silicon (Si).
"The present substrate is InP. Other research groups, including IMEC, have shown that InP can be grown on Si," Mark Rodwell, professor of electrical and computer engineering at UCSB, told EE Times. "There is, indeed, at least one InGaAs-on-Si III-V MOS presentation at the VLSI Symposium. So, although our record devices are not on Si, it can certainly be done."
Figure 1: Transmission electron microscopy shows a 2.7nm channel, sophisticated high-K dielectric, and other advanced features that researchers say make this the world's highest-performing MOSFET. Source: UCSB
Not only did the III-V MOSFETs deliver higher performance than similar sized silicon transistors, but they also consumed less power. According to Rodwell, they will eventually overtake silicon FinFET transistors in speed and power consumption.
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