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CMOSIS upgrades imager with NIR enhancement

Posted: 11 Jun 2014  Print Version  Bookmark and Share

Keywords:NIR  CMOS  image  sensor 

CMOSIS has launched an NIR (near infra-red) version of its 12Mpx/300fps global shutter CMOS image sensor at the ISS 2014 in Japan.

The NIR enhanced CMV12000 version is processed on 12um epi Si wafer starting material. This epi layer is 7µm thicker than on the "standard wafers" and significantly increases the QE for wavelengths above 600nm. At 825nm the QE is almost doubled compared to that on 5um epi Si wafers, increasing from 15 per cent to 30 per cent for the monochrome part.

NIR CMV12000

The CMV12000 is a high sensitivity pipelined global shutter CMOS image sensor. Source: CMOSIS

The CMV12000 has a resolution of 4096x3072 pixels (super HD format). It is pipelined, which enables exposure during read out. Its pixel design makes true correlated double sampling (CDS) possible, claiming significant reduction of fixed pattern noise and dark noise.

The imager integrates 64 LVDS channels, each running at 300Mbit/s resulting in a 150fps frame rate at full resolution (10 bits per pixel). Driving and read-out programming can be set over a serial peripheral interface. An internal timing generator produces the signals needed for read-out and exposure of the image sensor while external exposure triggering remains possible.

The CMV12000 NIR is available in sample volumes. Volume orders and shipments will be supported towards the end of 2014.

NIR CMV12000 diagram

The CMV12000 block diagram. Source: CMOSIS





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