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Analyst: China LTE deployments to pump RF device market

Posted: 17 Mar 2014  Print Version  Bookmark and Share

Keywords:ABI Research  RF power amplifier  LTE  TD-LTE  gallium nitride 

ABI Research has forecasted that the market for RF power amplifiers increased at a single-digit rate while RF power semiconductors grew at a double-digit clip in 2013, despite the poor performance of the market the previous year. To top this optimism off, the market research firm added that this trend will continue, with China boosting the segment with increased wireless infrastructure deployments.

According research director Lance Wilson, ABI Research: "For the foreseeable future the Asia-Pacific region, particularly China, will dominate this market and remain the most important region and focus for high power RF amplifiers and RF power devices for wireless infrastructure."

LTE and the emerging TD-LTE air interfaces will be the technology engines of growth for the next five-years. Another important breakthrough will be that gallium nitride (GaN) devices will start to impact the device segment. "Although silicon LDMOS is by far the technology leader in this market," stated Wilson, "GaN devices captured meaningful share in 2013 and will increasingly do so for the next several years."

The continuing overall need for wireless data remains an important driver for the overall market for RF Power amplifier equipment and RF power semiconductor devices.





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