GaN on GaN LED boosts wall-plug efficiency
Soraa has designed a LED that runs at 75 per cent wall-plug-efficiency at a current density of 35A/cm2 and a junction temperature of 85°C. The third generation GaN on GaN device is claimed to have outperformed its nearest competitor by 20 per cent at normal operating conditions.
The LED features a 30 per cent increase in white lumen per watt efficiency compared with the company's previous generation device. Billed as the world's most efficient, the Gen3 LED is targeted for modules, as well as large form factor PAR and AR, and the MR16 lamps.
The LED uses the properties of the native GaN substrate and a chip-on-board LED package design to create a single point source that enables robust beam control. It adopts a proprietary three-phosphor combination, which excites optical brightening agents and renders whiteness as well as colours.
The GaN on GaN LED material allows reliable operation at high current densities. It boasts 1000x fewer defects than conventional LEDs, where GaN is layered on cheaper foreign substrates like sapphire, silicon carbide, or silicon.
- Paul Buckley
EE Times Europe
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