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GAn-on-SiC based HEMT pushes power at 150W

Posted: 17 Feb 2014  Print Version  Bookmark and Share

Keywords:HEMT  GaN on SiC  MACOM 

M/A-COM Technology Solutions has launched an RF power transistor, a GaN-on-SiC HEMT for pulsed applications. The MAGX-000025-15000 is gold-metalised, and provides 150W of power output with 18dB of gain and 58 per cent efficiency.

Boasting high-breakdown voltages, the MACOM confirms that the device can operate with stability at extreme load mismatch conditions. It is offered in a four lead, Gemini package that allows for very high broadband match performance.

"The 150W power transistor in a Gemini style package offers the user incredible flexibility in operation. The device can be configured in a push-pull configuration for wideband, low distortion operation or operated in single-ended mode for a smaller size form factor," said Paul Beasly, Product Manager.

Operating on a frequency range of up to 2,500MHz, the device is a robust transistor, boasting a mean time to failure (MTTF) of 600 years.

Other features include an efficiency of 58 per cent, load mismatch stability VSWR-S of 5:1, and a load mismatch tolerance VSWR-T of 10:1. Pulse droop is 0.2dB

- Jean-Pierre Joosting
  EE Times Europe





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