Infineon Technologies AG has released the 600V CoolMOS C6 superjunction MOSFETs that are easy to design-in and are suited for various energy conversion applications, including power factor correction (PFC) and pulse width modulation (PWM) stages. They offer very low capacitive losses and area specific RDS(on) values that make power supplies more efficient, more compact, lighter and cooler. The devices also improve the control of switching behavior and improve robustness against parasitic inductances and capacitances in the board.
Infineon's latest CoolMOS generation meets efficiency requirements and government regulations and enables it's customer to choose from a broad portfolio which ranges from 36mΩ to 3.3Ω.
The 600V CoolMOS C6 devices also feature low area specific on-state resistance (Ron* A); low energy storage in output capacitance (Eoss); high body diode ruggedness; and low reverse recovery charge (Qrr).
They offer easy control of switching behavior; better light load efficiency compared to C3; proven CoolMOS quality combined with high body diode ruggedness guarantee outstanding reliability; and lower price compared to previous CoolMOS generations.
In addition, they are well-suited for PFC and PWM stages for server and PC silverbox; in LCD and PDP TV; lighting; and adapters.
For application notes on MOSFETs click here.
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