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Samsung, Hynix partner on STT-MRAM

Posted: 27 Jun 2008  Print Version  Bookmark and Share

Keywords:magnetic RAM  MRAM partnership  Samsung-Hynix alliance 

Rival South Korean memory chipmakers Samsung Electronics and Hynix Semiconductors have forged an alliance to develop spin torque transfer magnetic RAM (STT-MRAM), according to an Agence France Presse report.

Samsung and Hynix will jointly develop STT-MRAM chips under a state-backed program starting in September. The next-generation memory chip is expected to play a significant role in flash memory development, by helping researchers overcome current capacity limits.

The partnership is a part of an R&D agreement signed by the heads of all South Korea IC firms and research laboratories as well as Knowledge Economy Minister Lee Young-Ho. According to Lee, the agreement will help the country maintain its global leadership in the microchip market and take the global initiative in developing next-generation chips.

The ministry added that the partnership between the two memory makers would help secure vital technologies locally and avoid future royalties. Officials also expect the alliance to help both Samsung and Hynix become the industry standard-setter for the 450mm wafer fab market. The companies also agreed to buy more locally made wafer parts, materials and equipment.

Under the seven-year program that began in 2004, $50.9 million dollars will be spent to help South Korea design and make STT-MRAM and other non-volatile memory devices. Officials disclosed the government was footing $27.43 million won of the total and hopes to use the technologies developed to seize 40 percent of the non-volatile memory market by 2012.





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