Chip brings power efficiency to LDMOS base stations
NXP Semiconductors has launched the BLC7G22L(S)-130 base station power transistor—the first to feature its Gen7 LDMOS technology—optimized for high power use and Doherty amplifier applications.
Please login to view article>>
Registered already? Login to view complete content.
If you have already registered on the following websites, please log in using your email address and password
eeForum: Demystifying Vietnam What does Vietnam offer that a rising number of top-tier semiconductor companies are setting up and expanding operations there?