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IGBTs trim power dissipation by up to 30%

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International Rectifier introduces a family of 600V insulated gate bipolar transistors (IGBTs) that reduces power dissipation by up to 30 percent in UPS and solar inverter applications up to 3kW.

The new application-specific devices use IR's latest-generation field stop trench technology to reduce conduction and switching losses, and are optimized for switching at 20kHz with low short circuit requirements, enabling higher efficiency power conversion in UPS and solar inverter applications.

Co-packaged with ultrafast soft recovery diodes, the new family of IGBTs has lower collector-to-emitter saturation voltage (VCE(on)) and total switching energy (ETS) than punch-through (PT) and non-punch-through (NPT) type IGBTs, says IR. In addition, the internal ultrafast soft recovery diode improves efficiency and reduces EMI.

"Traditionally, IGBT devices have excessive switching losses at the frequencies used in UPS and solar inverters," explained Carl Blake, IR's product marketing director, energy saving products, in a statement. "IR's new Trench IGBT devices have lower switching energy coupled with low conduction losses. These lower losses provide higher efficiency, reducing the size of the unit and the cost of power generation to the end user."

Pricing for the devices begins at $0.68 for the IRGB4059DPbF, $0.82 for the IRGB4045DPbF, $0.84 for the IRGB4060DPbF, $1.00 for the IRGB4064DPbF and $2.79 for the IRGP4063DPbF each in 10,000-unit quantities. Production orders are available immediately. The devices are RoHS compliant and prices are subject to change.


Keywords: IGBT   UPS   solar  


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