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45nm: What Intel didn't tell you
Author: Don Scansen

Some high points of Intel's 45nm HKMG technology are: high-k first, metal-gate-last integration; hafnium oxide (HfO2) gate dielectric (1nm EOT); and dual band-edge work function metal gates (TiN for PMOS; TiAlN for NMOS). The gate-last integration is one point that needs a bit of clarification in the Intel process flow.

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