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 STMicroelecronics has introduced a 200A version of its PowerMESH IGBT family, which features low forward-voltage drops at high currents.
Suitable for use in aluminum welding and induction heating equipment, as well as in UPS and SMPS devices, the STGE200NB60S exhibits low on-voltage losses without using any heavy metal doping or electronic radiation to reduce the lifetime of minority carriers.
At 600V and 100A, the IGBT exhibits a saturation voltage <1V with an operating temperature of 100°C. At 200A and 25°C, saturation voltage remains <1.3V.
Available in an insulated ISOTOP package, the STGE200NB60S uses "Mesh overlay" technology, which is a strip-based high voltage process made up of a p-type mesh structure diffused onto the n-epitaxial layer of an IGBT. The n+ strip that replaces the cells and represents the emitter of the device is then directly diffused onto the p-Mesh layer. The S suffix indicates that this n-channel part has been optimized for low on-voltage drops at operating frequencies of up to 10kHz. | 
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